DESD5V0S1BA-7【PDF 2/4 页】TVS DIODE 5V 1CH UNI SOD323

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DESD5V0S1BA

Maximum Ratings @T A = 25°C unless otherwise specified

Characteristic

Peak Pulse Power Dissipation

Peak Pulse Current

ESD Protection – Contact Discharge

ESD Protection – Air Discharge

Symbol

P PP

I PP

V ESD_Contact

V ESD_Air

Value

130

12

±30

±30

Unit

W

A

kV

kV

Conditions

8/20 μ s, per Fig. 1

8/20 μ s, per Fig. 1

IEC 61000-4-2 Standard

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Package Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

Symbol

P D

R θ JA

T J , T STG

Value

200

625

-65 to +150

Unit

mW

° C/W

° C

Electrical Characteristics @T A = 25°C unless otherwise specified

Characteristic

Reverse Standoff Voltage

Channel Leakage Current (Note 6)

Clamping Voltage

Breakdown Voltage

Differential Resistance

Channel Input Capacitance

Symbol

V RWM

I RM

V CL

V BR

R DIF

C T

Min

-

-

-

-

5.5

-

-

Typ

-

5

-

-

-

0.4

35

Max

5

100

10

14

9.5

-

45

Unit

V

nA

V

V

?

pF

Test Conditions

-

V RWM = 5V

I PP = 1A, tp = 8/20 μ s

I PP = 12A, tp = 8/20 μ s

I R = 1mA

I R = 10A, tp = 8/20 μ s

V R = 0V, f = 1MHz

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

35

f = 1 MHz

100

30

50

25

0

0

20

40

60

20

0

1

2 3 4 5 6

t, TIME ( μ s)

Fig. 1 Pulse Waveform

V R , REVERSE VOLTAGE (V)

Fig. 2 Typical Total Capacitance vs. Reverse Voltage

DESD5V0S1BA

Document number: DS31275 Rev. 5 - 2

2 of 4

March 2012

? Diodes Incorporated

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